Qorvo, Inc., a leading innovator in RF solutions for the connected world, has recently introduced six new gallium nitride (GaN) chip transistors: the TGF2933-36 and TGF2941-42. These components are designed to deliver exceptional high-frequency performance with reduced noise levels, making them ideal for advanced communication systems, radar applications, and defense-related RF designs.
The new GaN transistors are built using Qorvo’s proprietary 0.15µm silicon carbide-based GaN process, known as QGaN15. This advanced fabrication technology enables operation at frequencies up to 25 GHz, supports compact chip-scale designs, and provides cost-effective, high-performance discrete solutions suitable for K-band applications. The QGaN15 process is a key enabler for next-generation RF systems requiring both power efficiency and signal integrity.
Roger Hall, General Manager of Qorvo's High Performance Solutions Group, emphasized the company's commitment to delivering superior GaN products. “Our high-performance GaN offerings, combined with complementary modules and expert engineering support, help our customers bring their designs to market faster,†he said. “This is what sets us apart in the industry.â€
To further enhance design capabilities, Qorvo partners with Modelingics, Inc., a leader in simulation technology. They provide comprehensive linear, nonlinear, and noise models that allow engineers to conduct accurate and rapid performance testing. These models support extended operating conditions, including voltage ranges, ambient temperatures, and self-heating effects, while offering optimized waveform access for precise analysis.
The table below summarizes the key features of the QGaN15 product line:
At 10 GHz, the following data illustrates the performance characteristics of the transistors:
Qorvo has long been a dominant force in the GaN RF market, particularly in defense and cable industries. Since 1999, the company has been at the forefront of GaN research and development, delivering reliable, high-efficiency RF solutions. In 2014, Qorvo completed the U.S. Defense Production Act Program No. 3 for GaN on SiC and is certified as a Class 1A trusted source by the Defense Manufacturing Electronics Agency. It is also the only GaN supplier to reach MRL level 9, demonstrating its maturity and reliability.
With its proven performance, low maintenance requirements, and long operational lifespan, Qorvo continues to drive innovation across the entire GaN spectrum—from DC to Ka-band—enabling seamless transitions from design to deployment.
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