Most major LED companies are actively applying for patents related to silicon-based GaN technology, and a few use it as their core strategy and technology route. Yole predicts that this technology will shine in power electronics and RF applications relative to the LED industry because of its low cost and compatibility with CMOS.
Silicon-based GaN substrates face some technical challenges. The large lattice mismatch between GaN and silicon results in a defect density of the epitaxial layer being too high. Moreover, the large coefficient of thermal expansion between the two causes it to generate large tensile stresses when cooled from the growth temperature to room temperature, which causes cracking of the film and concave bending of the wafer.
Yole's report selects patents to address these challenges and provides an in-depth analysis of patent holders and their patented technology, but does not cover patents for active layers or GaN devices.
At the moment, significant advances have been made to these patented surface critical material issues, such as reduced dislocation density and stress management to prevent wafer breakage and warpage. Yole Développement believes that silicon-based GaN IP is advanced enough to begin mass production.
More than 50 companies and research institutes are involved in silicon-based GaN IP, and most major GaN vendors are among the best in patent applications. Toyota Synthetic, Toshiba, Panasonic, Mitsubishi, Nitronex, Soitec and Azzurro are evenly strong IP combinations. But Samsung, Dowa, LG, Sharp and NGK Insulators are becoming major players in the silicon-based GaN IP landscape. Soitec and Sumitomo are leading the way in transferring GaN layers to silicon substrates.
At present, only a few manufacturers are selling epitaxial wafers or stencils, and manufacturers of commercial silicon-based GaN devices are rare. Unlike a few noted IP integrations (Nitro nex and Internatio nal Rectifier, Toshiba and Purui Opto, Soitec and Sumitomo, and Macom (Nitronex) and IQE), silicon-based GaN IP has not been widely used by companies to raise licensing negotiations and Supply cooperation. As of now, patent litigation is rare. But the existing IP covers all aspects of these technical challenges. In the last five years, major GaN vendors have applied for a number of key patents (Toshiba, Samsung, LG, Sharp, NGK, Sumitomo, Soitec, Azzurro, and Dowa). Moreover, with its development in the field of RF and power devices, the silicon-based GaN industry has begun to take shape, so the IP war will start in the next three years.
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