Recently, a research team led by Dr. Sheng Zhigao from the Strong Magnetic Field Science Center at the Hefei Institute of Material Sciences, Chinese Academy of Sciences, in collaboration with Dr. Jin Dingming from Shanghai University and researcher Su Fuhai from the Institute of Solid State Physics, successfully developed the first graphene-based terahertz stress modulator. This groundbreaking achievement opens new possibilities for terahertz technology applications.
Terahertz (THz) waves lie between microwaves and infrared light on the electromagnetic spectrum, typically ranging from 10^11 to 10^13 Hz. These waves have unique properties that make them highly valuable in various fields such as communication, security, sensing, and national defense. Often referred to as "one of the top ten technologies that will shape the future," THz technology is considered a key area of innovation. The terahertz modulator, acting as the core component in THz systems, plays a crucial role in enabling efficient and precise control of THz signals.
To achieve better performance, researchers are continuously exploring new modulation techniques beyond traditional electrical and optical methods. In this study, the team utilized graphene, a two-dimensional material known for its exceptional mechanical and electrical properties, to build a stress-based THz modulator. Using a self-developed terahertz time-domain spectroscopy system (THz-TDS), they thoroughly analyzed the device's modulation characteristics under different stress conditions.
The results showed that the graphene-based device exhibited remarkable modulation efficiency, with a modulation depth reaching up to 26% at 1 THz. It also demonstrated bidirectional modulation capabilities, where tensile and compressive stresses resulted in positive and negative modulation effects, respectively. Additionally, the device showed excellent stability and repeatability, thanks to graphene’s outstanding mechanical strength and conductivity. Unlike other modulation methods, this approach relies on adjusting the intrinsic carrier mobility rather than generating unbalanced carriers, leading to significantly lower insertion loss.
This innovative technique has great potential for developing high-speed THz modulators, paving the way for more advanced THz systems in the future. The findings were published in *Advanced Optical Materials*, and the research was supported by several prestigious funding programs, including the National Natural Science Foundation of China, the National Key Research and Development Project, and the Frontier Science Key Research Project of the Chinese Academy of Sciences.
For more details, you can read the full article here: [http://onlinelibrary.wiley.com/doi/10.1002/adom.201700877/full](http://onlinelibrary.wiley.com/doi/10.1002/adom.201700877/full)
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